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this is information on a product in full production. july 2013 docid024491 rev 2 1/15 15 STB9NK80Z automotive-grade n-channel 800 v, 1.5 typ., 5.2 a zener-protected supermesh? power mosfets in d 2 pak package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? extremely high dv/dt capability ? 100% avalanche tested ? gate charge minimized ? zener-protected ? very low intrinsic capacitances applications ? switching application description this device is an n-channel zener-protected power mosfet developed using stmicroelectronics' supermesh? technology, achieved through optimization of st's well established strip-based powermesh? layout. in addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. d 2 pak 1 3 tab '7$% * 6 am01476v1 type v ds (@tjmax) r ds(on) max. i d STB9NK80Z 800v 1.8 5.2a table 1. device summary order codes marking package packaging STB9NK80Z b9nk80z d2pak tape and reel www.st.com
contents STB9NK80Z 2/15 docid024491 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid024491 rev 2 3/15 STB9NK80Z electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 800 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 5.2 a i d drain current (continuous) at t c = 100 c 3.3 a i dm (1) 1. pulse width limited by junction temperature. drain current (pulsed) 20.8 a p tot total dissipation at t c = 25c 125 w derating factor 1 w/c esd gate-source human body model (c = 100 pf, r = 1.5 k )4 kv dv/dt (2) 2. i sd 5.2 a, di/dt 200 a/ s, v dd v (br)dss peak diode recovery voltage slope 4.5 v/ns t j t stg max operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 5.2 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 210 mj
electrical characteristics STB9NK80Z 4/15 docid024491 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =1 ma, v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v v ds = 800 v, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 2.6 a 1.5 1.8 table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300 s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 2.6 a - 5 - s c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 -1138- pf c oss output capacitance - 122 - pf c rss reverse transfer capacitance -25- pf c oss eq. (2) 2. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . equivalent output capacitance v ds =0 , v ds = 0 to 640 v - 50 - pf t d(on) turn-on delay time v dd = 400 v, i d = 2.6 a, r g = 4.7 , v gs = 10 v (see figure 15 ) -20- ns t r rise time - 12 - ns t r(off) turn-off delay time - 45 - ns t r fall time - 22 - ns q g total gate charge v dd = 640 v, i d = 2.6 a, v gs = 10 v (see figure 16 ) -40-nc q gs gate-source charge - 7 - nc q gd gate-drain charge - 2.1 - nc t r(voff) off-voltage rise time v dd = 640 v, i d = 2.6 a, r g = 4.7 , v gs = 10 v (see figure 15 ) -12- ns t r fall time - 10 - ns t c cross-over time - 20 - ns
docid024491 rev 2 5/15 STB9NK80Z electrical characteristics the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulsed: pulse duration=300 s, duty cycle 1.5% source-drain current source-drain current (pulsed) - 5.2 20.8 a a v sd (2) 2. pulse width limited by safe operating area forward on voltage i sd = 5.2 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 5.2 a, di/dt = 100 a/ s v dd = 50 v, tj = 150c (see figure 20 ) - 530 ns q rr reverse recovery charge - 3.31 c i rrm reverse recovery current - 12.5 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br) gso gate-source breakdown voltage i d = 0 i gs = 1ma 30 v
electrical characteristics STB9NK80Z 6/15 docid024491 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on-resistance
docid024491 rev 2 7/15 STB9NK80Z electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristic figure 13. normalized bvdss vs temperature
electrical characteristics STB9NK80Z 8/15 docid024491 rev 2 figure 14. maximum avalanche energy vs temperature
docid024491 rev 2 9/15 STB9NK80Z test circuits 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STB9NK80Z 10/15 docid024491 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
docid024491 rev 2 11/15 STB9NK80Z package mechanical data figure 21. d2pak (to-263) drawing figure 22. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
packaging mechanical data STB9NK80Z 12/15 docid024491 rev 2 5 packaging mechanical data table 10. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
docid024491 rev 2 13/15 STB9NK80Z packaging mechanical data figure 23. tape figure 24. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STB9NK80Z 14/15 docid024491 rev 2 6 revision history table 11. document revision history date revision changes 05-jun-2013 1 first issue. 12-jul-2013 2 document status promoted from preliminary to production data.
docid024491 rev 2 15/15 STB9NK80Z please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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